STRESS-STRAIN STATE CALCULATION IN CONSTRUCTION ELEMENTS OF POWERED SEMICONDUCTOR MODULES WITH SOLDER CONTACTS

Martynenko Valentin Alexandrovich, Director of research engineering center of power semi-conducting devices “Electrovypryamitel” (Saransk), martin@moris.ru
Khapugin Aleksey Alexandrovich, Head of designing department, research engineering center of power semi-conducting devices “Electrovypryamitel” (Saransk), martin@moris.ru
Nishchev Konstantin Nikolaevich, Candidate of physical and mathematical sciences, associate professor, director of the Institute of Physics and Chemistry, Mordovia State University named after N. P. Ogaryov (Saransk), nishchev@inbox.ru
Novopoltsev Mikhail Ilyich, Candidate of physical and mathematical sciences, associate professor, sub-department of general physics, Mordovia State University named after N. P. Ogaryov (Saransk), novopol@inbox.ru

538.95

The article presents the results of numerical modelling of strain-stress states in the system of silicon-ceramic-metal matrix composite based on a power IGBT module with soldered contacts. The author explores the influence of materials used in the constructional units and the technology of modules assembling on residual voltages in the system. The results can be used by specialists in the field of power electronics when designing and assessing reliability indexes of semi-conductor devices under cycling duty.

IGBT-modules, heat-removals, metal matrix composites, Al-SiC, mechanical strain, ANSYS.